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| 型号 | HCT802 |
| 厂商 | TT Electronics/Optek Technology |
| 描述 | MOSFET DUAL ENHANCE HERMETIC SMD |
| HCT802 PDF |  |
| 代理商 | HCT802 |
| 标准包装 | 1 |
| FET 型 | N 和 P 沟道 |
| FET 特点 | 标准 |
| 漏极至源极电压(Vdss) | 90V |
| 电流 - 连续漏极(Id) @ 25° C | 2A，1.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 5 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大） | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds | 70pF @ 25V |
| 功率 - 最大 | 500mW |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 6-SMD，无引线 |
| 供应商设备封装 | 6-SMD |
| 包装 | 散装 |
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